npn bc107 ? BC108 ? bc109 25/09/2012 comset semiconductors 1/3 the bc107, BC108 and bc109 are silicon planar epitaxial npn transistors mounted in to-18 metal package. they are suitable for use in drive audio stages, low-noise input audio stages and as low power, high gain general purpose transistors. the complementary pnp are bc177, bc178 and bc179. compliance to rohs. absolute maximum ratings symbol bc107 BC108 bc109 unit v ceo collector-emitter voltage (i b =0) 45 20 20 v v cbo collector-base voltage (i e =0) 50 30 30 v v ebo emitter-base voltage (i c =0) 6 5 5 v i c collector current 100 ma i cm collector peak current 200 ma p d total power dissipation @ t amb = 25 300 mw t j junction temperature 175 c t st g storage temperature range -65 to +150 c electrical characteristics tj=25c unless otherwise specified symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb = 20 v i e = 0 bc107 - - 15 na BC108 bc109 v cb = 20 v i e = 0 v t j = 150c bc107 - - 15 a BC108 bc109 i ebo emitter cutoff current v eb = 5 v i c = 0 bc107 - - 50 na BC108 bc109 v ceo collector-emitter breakdown voltage i c = 10 ma i b = 0 bc107 45 - - v BC108 20 - - bc109 20 - - v cbo collector-base breakdown voltage i c = 10 a v be = 0 bc107 50 - - v BC108 30 - - bc109 30 - - v ebo emitter-base breakdown voltage i e = 10 a i c = 0 bc107 5 - - v BC108 bc109 l l o o w w n n o o i i s s e e g g e e n n e e r r a a l l p p u u r r p p o o s s e e a a u u d d i i o o a a m m p p l l i i f f i i e e r r s s
npn bc107 ? BC108 ? bc109 25/09/2012 comset semiconductors 2/3 symbol ratings test condition(s) min typ max unit v ce(sat) collector-emitter saturation voltage i c = 10 ma i b = 0.5 ma bc107 - 0.09 0.25 v BC108 bc109 i c = 100 ma i b = 5 ma bc107 - 0.2 0.6 BC108 bc109 v be(sat) base-emitter saturation voltage i c = 10 ma i b = 0.5 ma bc107 - 0.70 - v BC108 bc109 i c = 100 ma i b = 5 ma bc107 - 0.9 - BC108 bc109 v be base-emitter voltage i c = 2 ma v ce = 5 v bc107 0.55 0.65 0.7 v BC108 bc109 i c = 10 ma v ce = 5 bc107 - - 0.77 BC108 bc109 h fe dc current gain (*) i c = 10 a v ce = 5 v bc107a - 90 - - BC108a bc109a bc107b 40 150 - BC108b bc109b bc107c 100 270 - BC108c bc109c i c = 2 ma v ce = 5 v bc107a 110 - 220 BC108a bc109a bc107b 200 - 450 BC108b bc109b bc107c 420 - 800 BC108c bc109c f t transition frequency i c =10 ma, v ce = 5 v f = 100 mhz bc107 100 - - mhz BC108 bc109 f noise figure i c = 200 a v ce = 5 v f = 1khz r g = 2k ? b = 200hz bc107 - - 10 db BC108 - - 10 bc109 - - 4 c c collector capacitance i e = 0 v cb = 10 v f = 1mhz bc177 - 4 6 pf bc178 bc179
npn bc107 ? BC108 ? bc109 25/09/2012 comset semiconductors 3/3 thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to mounting base 500 c/w r thj-c thermal resistance, junction to ambient in free air 200 c/w mechanical data case to-18 august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 12.7 - b - 0.49 c 0.9 - d - 5.3 e - 4.9 f - 5.8 g 2.54 - h - 1.2 i - 1.16 l 45 - pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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